Single event transient effects in a voltage reference

被引：10

作者：

Adell, PC

Schrimpf, RD

Cirba, CR

Holman, WT

Zhu, X

Barnaby, HJ

Mion, O

机构：

[1] Vanderbilt Univ, Nashville, TN 37235 USA

[2] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA

[3] Alcatel Space, F-06156 Cannes La Bocca, France

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 02期

关键词：

D O I：

10.1016/j.microrel.2004.05.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：355 / 359

页数：5

共 8 条

[1] Analysis of single-event transients in analog circuits [J].

Adell, P ;

Schrimpf, RD ;

Barnaby, HJ ;

Marec, R ;

Chatry, C ;

Calvel, P ;

Barillot, C ;

Mion, O .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2616-2623

[2]

*CAD, 2001, 9 2 US MAN SCHEM CAP

[3]

ECOFFET R, 1994, IEEE RAD EFF DAT WOR, P72

[4]

*ISE INT SYST ENG, 2002, DESSIS 7 5 US MAN

[5] A model for single-event transients in comparators [J].

Johnston, AH ;

Swift, GM ;

Miyahira, TF ;

Edmonds, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2624-2633

[6]

MAREC R, 2001, RAD ITS EFFECTS COMP, P343

[7]

*SILVACO INT, 1998, SMARTSP US MAN

[8]

Ziegler J. F., 1985, The Stopping of Ions in Matter, P93, DOI DOI 10.1007/978

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