2D layered SiP as anisotropic nonlinear optical material

被引:27
|
作者
Sar, Huseyin [1 ]
Gao, Jie [1 ]
Yang, Xiaodong [1 ]
机构
[1] Missouri Univ Sci & Technol, Dept Mech & Aerosp Engn, Rolla, MO 65409 USA
基金
美国国家科学基金会;
关键词
HIGHLY SENSITIVE DETECTION; 3RD-HARMONIC GENERATION; SEMICONDUCTORS; STABILITY; SILICON;
D O I
10.1038/s41598-021-85938-4
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Two-dimensional (2D) material of silicon phosphide (SiP) has recently been shown as a promising optical material with large band gap, fast photoresponse and strong anisotropy. However, the nonlinear optical properties of 2D SiP have not been investigated yet. Here, the thickness-dependent in-plane anisotropic third-harmonic generation (THG) from the mechanically exfoliated 2D layered SiP flakes is reported. The crystal orientation of the SiP flake is determined by the angle-resolved polarized Raman spectroscopy. The angular dependence of the THG emission with respect to the incident linear polarization is found to be strongly anisotropic with the two-fold polarization dependence pattern. Furthermore, the effect of the SiP flake thickness on the THG power is analyzed.
引用
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页数:8
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