Swift heavy ion irradiation induced microstructural transformation in selenium thin films

被引：5
|
作者：
Singh, Harpreet [1 ,2 ]
Singh, Palwinder [3 ]
Singh, Fouran [4 ]
Kumar, Akshay [6 ]
Thakur, Anup [1 ]
Singh, Abhinav Pratap [5 ]
机构：
[1] Punjabi Univ, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India
[2] Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India
[3] Chungbuk Natl Univ, Dept Phys, Cheongju 28644, Chungbuk, South Korea
[4] Inter Univ Accelerator Ctr IUAC, Mat Sci Grp, New Delhi 110067, India
[5] Dr B R Ambedkar Natl Inst Technol, Dept Phys, Jalandhar 144011, Punjab, India
[6] Sri Guru Granth Sahib World Univ, Dept Nanotechnol, Fatehgarh Sahib 140407, Punjab, India
来源：
RADIATION PHYSICS AND CHEMISTRY | 2022年 / 191卷
关键词：
Melt quenching; Thermal evaporation; Density of defect states; Nano-rods; OPTICAL-PROPERTIES; CONTROLLED GROWTH; LARGE-AREA; NANOWIRES; SE; NANOPARTICLES; STATES; MECHANISM; IMPACT;
D O I：
10.1016/j.radphyschem.2021.109863
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The structural, morphological and optical properties of selenium thin films are important for the application in electronic and optoelectronic devices. In the present work, the effect of annealing in vacuum at different temperatures (130 degrees C, 160 degrees C and 200 degrees C) and swift heavy ion irradiation (Ag9+ ions with energy of 120 MeV) at different fluences (5 x 10(11), 1 x 10(12), 5 x 10(12) and 1 x 10(13) ions/cm(2)) on various properties of thermally deposited Se thin films has been investigated. The phase transition from amorphous to crystalline (t-Se) phase has been achieved with annealing followed by ion irradiation. Raman spectral analysis also confirms the trigonal phase of selenium in annealed and ion irradiated thin films. The morphology of films is found to be dependent on annealing temperature and ion fluence. The growth of nano-rods is observed in the preannealed (130 degrees C), irradiated (5 x 10(11) ions/cm(2)) selenium thin film. Optical properties also have been found to be tailored with annealing temperature and ion fluence.
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页数：7
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