Search for magnetism in transition metal atoms doped tetragonal graphene: A DFT approach

被引:30
作者
Chowdhury, Suman [1 ]
Majumdar, Arnab [2 ]
Jana, Debnarayan [1 ]
机构
[1] Univ Calcutta, Dept Phys, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, WB, India
[2] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
关键词
Graphene; Density functional theory; Magnetic properties; OPTICAL-PROPERTIES; NOBEL LECTURE; ELECTRONIC-PROPERTIES; ADATOM ADSORPTION; REAL-SPACE; CARBON; PLANAR; BORON; SILICENE; SHEETS;
D O I
10.1016/j.jmmm.2017.06.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The discovery of different two-dimensional (2D) materials both theoretically and experimentally, can change the scenario of the current electronic industry because of their intriguing properties. Among the 2D materials, the first one which was discovered experimentally was graphene. In this work we have studied the electronic and magnetic properties of a new allotrope of disordered graphene, which is not hexagonal, rather possesses tetragonal symmetry known as T-graphene (TG). Density functional theory (DFT) has been thoroughly employed to study the relevant electronic properties. In previous works, it has been reported that pristine TG is non-magnetic. It is also known that, introducing transition metal (TM) atoms is a feasible way to control the electronic and magnetic properties. Here we have reported the relevant properties of four TM atoms i.e. Sc, V, Cr and Mn doped TG. From the defect formation energy study, it has been noticed that all the structures are endothermic in nature. For each case, we have found appreciable amount of magnetic moment. With increasing atomic weight of the dopant atom, the magnitude of the magnetic moment also increases. We have tried to explain this magnetic ordering with the help of spin-polarized partial density of states (PDOS). Controlling spin degrees of freedom is important for building spintronic devices. From that point of view, we hope this study will be useful to build TG based spintronic devices. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:523 / 530
页数:8
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