Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures

被引：0

作者：

Globisch, Bjoern ^{[1
]}

Stanze, Dennis ^{[1
]}

Dietz, Roman J. B. ^{[1
]}

Goebel, Thorsten ^{[1
]}

Schell, Martin ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Berlin, Germany

来源：

2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年

关键词：

DYNAMICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towards their LTG GaAs counterparts. By increasing Be doping we reduce carrier trapping time, resulting in larger bandwidth. As a tradeoff, the current response is reduced.

引用

页数：2