Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures

被引：0
|
作者：
Globisch, Bjoern [1 ]
Stanze, Dennis [1 ]
Dietz, Roman J. B. [1 ]
Goebel, Thorsten [1 ]
Schell, Martin [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Berlin, Germany
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
关键词：
DYNAMICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towards their LTG GaAs counterparts. By increasing Be doping we reduce carrier trapping time, resulting in larger bandwidth. As a tradeoff, the current response is reduced.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] THz Generation Characteristics of Low-temperature-grown InGaAs Emitters
    Kim, J. O.
    Lee, S. J.
    Yee, D. S.
    Noh, S. K.
    Shin, J. H.
    Park, K. H.
    Kang, C.
    Kee, C. -S.
    Park, D. W.
    Kim, J. S.
    Kim, J. S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (05) : 1334 - 1338
  • [2] Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs
    Globisch, B.
    Dietz, R. J. B.
    Stanze, D.
    Goebel, T.
    Schell, M.
    APPLIED PHYSICS LETTERS, 2014, 104 (17)
  • [3] Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells
    Chen, Y
    Prabhu, SS
    Ralph, SE
    McInturff, DT
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 439 - 441
  • [4] Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
    Tsang, JS
    Lee, CP
    Lee, SH
    Tsai, KL
    Tsai, CM
    Fan, JC
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) : 664 - 670
  • [5] Improved InGaAs/InAlAs photoconductive THz receivers: 5.8 THz bandwidth and 80 dB dynamic range
    Globisch, B.
    Dietz, R. J. B.
    Stanze, D.
    Roehle, H.
    Goebel, T.
    Schell, M.
    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
  • [6] Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown InGaAs/InAlAs multiple quantum wells
    Appl Phys Lett, 26 (4062):
  • [7] Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown InGaAs/InAlAs multiple quantum wells
    Juodawlkis, PW
    McInturff, DT
    Ralph, SE
    APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4062 - 4064
  • [8] ULTRAFAST 1.55-MU-M PHOTORESPONSES IN LOW-TEMPERATURE-GROWN INGAAS/INALAS QUANTUM-WELLS
    TAKAHASHI, R
    KAWAMURA, Y
    KAGAWA, T
    IWAMURA, H
    APPLIED PHYSICS LETTERS, 1994, 65 (14) : 1790 - 1792
  • [9] Si-Doping of Low-Temperature-Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates
    Klochkov, Aleksey Nikolaevich
    Galiev, Galib Barievich
    Klimov, Evgenyi Aleksandrovich
    Pushkarev, Sergey Sergeevich
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (02):
  • [10] Over 1-Tbit/s demultiplexing using low-temperature-grown InGaAs/InAlAs multiple quantum wells
    Kobayashi, H
    Takahashi, R
    Matsuoka, Y
    Iwamura, H
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 821 - 824
12345