Determination of trace impurities in graphite and silicon carbide by total reflection X-ray fluorescence spectrometry after homogeneous liquid-liquid extraction

被引:11
|
作者
Yamaguchi, H [1 ]
Itoh, S
Igarashi, S
Naitoh, K
Hasegawa, R
机构
[1] Natl Res Inst Met, Tsukuba, Ibaraki, Japan
[2] Ibaraki Univ, Fac Engn, Dept Mat Sci, Hitachi, Ibaraki 3168511, Japan
关键词
homogeneous liquid-liquid extraction; total reflection X-ray fluorescence analysis; trace impurities; graphite; silicon carbide;
D O I
10.2355/isijinternational.40.779
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Using homogeneous liquid-liquid extraction as a pre-concentration method, a determination procedure of trace impurities (Fe, Ni and Cu) by total reflection X-ray fluorescence (TXRF) analysis was developed and optimized for graphite and silicon carbide samples. The samples were decomposed by alkali fusion. The residue was dissolved in a mixture of pentadeca-fluorooctanoic acid (PFOA), acetone and water, and the analytes were homogeneously dispersed by the aid of phenanthroline (phen). After phase separation with pH-adjustment, a portion of the sedimented water-immiscible liquid was pipetted on the polyester film that covered a silicon wafer sample-carrier. Then, the droplet was dried in a vacuum and analyzed by TXRF Analytical values in the sub-ppm or ppm level were well agreed with the certified values of the standard samples or the values observed by ICP-OES for a few samples.
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页码:779 / 782
页数:4
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