Morphology of fcc Co(110) films on Cu(110)

被引：7

作者：

Tölkes, C

David, R

Krzyzowski, MA

Zeppenfeld, P ^{[1
]}

机构：

[1] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria

[2] Sun Microsyst GmbH, D-40880 Ratingen, Germany

[3] Forschungszentrum, Inst Grenzflachenforsch & Vakuumphys, D-52426 Julich, Germany

来源：

SURFACE SCIENCE | 2000年 / 454卷 / 01期

关键词：

atom-solid scattering and diffraction - elastic; chemisorption; cobalt; copper; growth; hydrogen atom; low index single crystal surfaces; metal-metal magnetic thin film structures; oxygen; surface structure; morphology; roughness; and topography;

D O I：

10.1016/S0039-6028(00)00228-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface morphology of fee Co(110) films deposited on Cu(110) using oxygen as a surfactant is characterized by He atom scattering. Interference measurements reveal that the thicker Co films are quite flat and that this flatness is preserved after removal of the oxygen with atomic hydrogen. During growth of the first few layers a rough film morphology is observed which is related to the deconstruction of the Cu(110)-(2 x 1)O interface and the formation of a (1 x 2) reconstructed Co-Cu-O phase after deposition of the first Co monolayer. With increasing film thickness the measured step height changes from ( 1.28 +/- 0.02)Angstrom characteristic of the Cu(110) surface to (1.21 +/- 0.02)Angstrom attributed to the interlayer spacing of pseudomorphic fee Co(110). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：741 / 745

页数：5

共 19 条

[1]

ALSINGER R, 1988, SURF SCI, V200, P235

[2] DEBYE-WALLER FACTOR FOR HE/PT(111) [J].