Electrical Nonlinearity Emulation Technique for Current-Controlled Memristive Devices

被引:32
作者
Alharbi, Abdullah G. [1 ,2 ]
Fouda, Mohammed E. [3 ]
Khalifa, Zainulabideen J. [4 ]
Chowdhury, Masud H. [2 ]
机构
[1] Al Jouf Univ, Elect Engn Dept, Fac Engn, Sakaka 42421, Saudi Arabia
[2] Univ Missouri, Dept Comp Sci Elect Engn, Kansas City, MO 64110 USA
[3] Cairo Univ, Engn Math & Phys Dept, Fac Engn, Cairo 12613, Egypt
[4] King Fahd Univ Petr & Minerals, Elect Engn, Dhahran 31261, Saudi Arabia
关键词
Memristor; emulator circuit; current conveyor; oscillator; Simmons tunneling model; and ThrEshold adaptive memristor (TEAM) model; CIRCUIT; MODEL; BEHAVIOR;
D O I
10.1109/ACCESS.2017.2695402
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Emerging memristor technology is recently drawing widespread attention due to its potential for diverse applications. Due to the lack of real solid-state memristive devices, there have been many initiatives to develop memristor emulators to study their behavior and applications. One of the most widely used ideal memristor models developed by the HP Lab does not fit the anticipated nonlinear behaviors of a real memristor. In this paper, we propose the concept and the design of a practical memristor emulator, which can be used to mimic the behavior of the well-known current controlled memristor models like-Simmons tunneling barrier model and the ThrEshold adaptive memristor model. Our proposed emulator model mimics the behavior of the electrical nonlinearity of the fabricated memristor. Prior emulators can only emulate the linear electrical behavior. In addition to the mathematical modeling and analysis of the proposed emulator, we provide SPICE simulation and experimental results. Furthermore, the proposed emulator has been used to verify some applications like Wien Oscillators. Finally, a brief comparison with the previously published emulators is presented to highlight the advantages of the proposed design.
引用
收藏
页码:5399 / 5409
页数:11
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