Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure

被引：44
作者：
Lee, HN
Lim, MH
Kim, YT [1 ]
Kalkur, TS
Choh, SH
机构：
[1] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 136791, South Korea
[2] Korea Univ, Dept Phys, Seoul 136701, South Korea
[3] Colorado State Univ, Dept Elect & Comp Engn, Colorado Springs, CO 80933 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词：
ferroelectric; insulator; thin film; SrBi2Ta2O9; Y2O3; MEFIS; FET;
D O I：
10.1143/JJAP.37.1107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.
引用
收藏
页码：1107 / 1109
页数：3
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