Gain Switching of the Broad-Stripe InAs/GaAs Quantum Dot Lasers

被引：0
|
作者：
Cherotchenko, E. D. [1 ]
Dudelev, V. V. [1 ]
Shkol'nik, A. S. [2 ]
Livshits, D. A. [2 ]
Sokolovskii, G. S. [1 ]
机构：
[1] Ioffe Inst, St Petersburg, Russia
[2] Innolume GmbH, Dortmund, Germany
来源：
INTERNATIONAL CONFERENCE LASER OPTICS 2020 (ICLO 2020) | 2020年
关键词：
quantum dot lasers; gain switching; excited state lasing;
D O I：
10.1109/iclo48556.2020.9285501
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study gain switching of the broad-stripe InAs/GaAs quantum dot lasers and show that the ratio of ground and excited states emission varies with the lateral position at the laser facet.
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页数：1
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