Understanding the carbon impact on Si/SiGe:C HBT base current mismatch

被引：0

作者：

Danaie, Stephane ^{[1
,2
]}

Marin, Mathieu ^{[1
]}

Ghibaudo, Gerard ^{[2
]}

Vildeuill, Jean-Charles ^{[1
]}

Chouteau, Stephanie ^{[1
]}

Sicard, Isabelle ^{[1
]}

Monroy, Augustin ^{[1
]}

机构：

[1] STMicroelect, Cent R&D, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] IMEP, LNPG, F-38016 Grenoble, France

来源：

2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICMTS.2007.374460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have investigated the impact of the carbon concentration on bipolar transistor matching at medium current region. Original base current matching results, obtained from the characterization of two carbon concentration splits in a SiGe:C BiCMOS technology, are first discussed and well interpreted by a new base current mismatch physical model. Our assumptions are also confirmed by a matching characterization of bipolar transistors subjected to a hot carrier injection (HCI) stress.

引用

页码：83 / +

页数：2

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