Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

被引：1
作者：
Medvid, A. [1 ,2 ]
Onufrijevs, P. [1 ]
Dauksta, E. [1 ]
Barloti, J. [1 ]
Grabovskis, D. [1 ]
Ulyashin, A. [3 ]
机构：
[1] Riga Tech Univ, 14 Azenes Str, LV-1048 Riga, Latvia
[2] NAS, Inst Semicond Phys, Kiev, Ukraine
[3] Inst Energy Technol, N-2027 Kjeller, Norway
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8 | 2009年 / 6卷 / 08期
关键词：
N-JUNCTION FORMATION; SURFACE; CDZNTE;
D O I：
10.1002/pssc.200881447
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TOE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface. Study of photoluminescence (PL), atomic force microscopy (AFM) and Raman back-scattering spectra speak in favour of presence of quantum confinement effect (QCE) on the top of nanocones on the irradiated surface of semiconductor single crystals. Aggregation of vacancies under the irradiated surface forms nanocavities. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
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页码：1927 / +
页数：2
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