Electron Localization near the Mott Transition in the Organic Superconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br

被引：49

作者：

Sano, K. ^{[1
]}

Sasaki, T. ^{[1
,2
]}

Yoneyama, N. ^{[1
,2
]}

Kobayashi, N. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 21期

关键词：

DISORDERED-SYSTEMS; CONDUCTORS;

D O I：

10.1103/PhysRevLett.104.217003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of disorder on the electronic properties near the Mott transition is studied in an organic superconductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br, which is systematically irradiated by x rays. We observe that x ray irradiation causes Anderson-type electron localization due to molecular disorder. The resistivity at low temperatures demonstrates variable range hopping conduction with Coulomb interaction. The experimental results show clearly that the electron localization by disorder is enhanced by the Coulomb interaction near the Mott transition.

引用

页数：4

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