RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz

被引：30

作者：

Jessen, G. H. ^{[1
]}

Gillespie, J. K.

Via, G. D.

Crespo, A.

Langley, D.

Aumer, M. E.

Ward, C. S.

Henry, H. G.

Thomson, D. B.

Partlow, D. P.

机构：

[1] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] Northrop Grumman Elect Syst, Baltimore, MD 21030 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 05期

关键词：

AlInN; GaN; high-electron mobility transistor (HEMT); InAlN; power;

D O I：

10.1109/LED.2007.895417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAIN/GaN on semi-insulating SiC substrates. The devices had 0.24-mu m T-gates with a total width of 2 x 150 Mm. Final passivated performance values for these devices are Im = 1279 mA/mm, I-DSS = 1182 mA/mm, R-c = 0.43 Omega center dot mm, rho(s) = 315 Omega/sq, f(T) = 45 GHz, f(max(MAG)) = 64 GHz, and g(m) = 268 mS/mm. Continuous-wave power measurements at 10 GHz produced P-sat = 3.8 W/mm, G(t) = 8.6 dB, and PAE = 30% at V-DS = 20 V at 25% I-DSS. To our knowledge, these are the first power measurements reported at 10 GHz for this material.

引用

页码：354 / 356

页数：3

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