A Performance-Aware MOSFET Threshold Voltage Measurement Circuit in a 65-nm CMOS

被引：8

作者：

Wang, Dong ^{[1
]}

Tan, Xiao Liang ^{[1
,2
]}

Chan, Pak Kwong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] MediaTek Singapore, Singapore 138628, Singapore

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016年 / 24卷 / 04期

关键词：

Nonlinear temperature compensation; power supply rejection (PSR) enhancement; threshold voltage (V-TH) circuit; voltage reference; MUTUAL COMPENSATION; PPM/DEGREES-C; TEMPERATURE; SUB-1-V; DESIGN; IMPACT;

D O I：

10.1109/TVLSI.2015.2465841

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a new performance-aware nanometer-scale MOSFET threshold voltage (V-TH) measurement circuit that employs dual-segment nonlinear temperature compensation on the Brokaw circuit topology. Besides, a preregulator feedback control loop is used to enhance the power supply rejection (PSR) of the circuit. Fabricated in a UMC 65-nm CMOS process, it consumes 2.64 mu W at 1.1 V supply. The measured results indicated that the VTH measurement circuit achieves an average temperature coefficient (TC) of 28.7 ppm/degrees C over 15 samples in a temperature range of -30 degrees C to 80 degrees C. PSRs of -54.5 dB at 100 Hz and -43.5 dB at 10 MHz are obtained without any output filtering capacitor. The average reference voltage is 470.3 mV, which is close to the extrapolated VTH for a low-threshold nMOS transistor at absolute zero.

引用

页码：1430 / 1440

页数：11

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