Metalorganic vapor phase epitaxy growth of AlGaInAs quantum dots on (100) GaAs substrate

被引：1
作者：
Yuan, HR [1 ]
Dong, JR [1 ]
Jin, CS [1 ]
Wang, YJ [1 ]
机构：
[1] Inst Mat Res & Engn, Singapore, Singapore
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 270卷 / 1-2期
关键词：
morphology; metalorganic vapor phase epitaxy; nanomaterials; AlGaInAs; GaAs;
D O I：
10.1016/j.jcrysgro.2004.06.015
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
AlGaInAs quantum dots were grown on GaAs (100) substrate with low-pressure metalorganic vapor phase epitaxy. Growth temperature and trimethylaluminum input was varied to investigate their effects on quantum dot density and size. A model was proposed, the results agreed well with experiment. The morphological characteristics were interpreted in terms of adatom migration and nucleus stability, as well as pyrolysis of input precursors. The optimal growth temperature and aluminum composition in the vapor phase were estimated in order to achieve high quantum dot density. Under optimal growth conditions, quantum dot density can be as high as 2 x 10(10) cm(-2), about 1.5 times of aluminum-free quantum dots grown at the same temperature. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：50 / 56
页数：7
相关论文
共 8 条
[1]  
BAKELENOV O, 1997, J APPL PHYS, V82, P6362
[2]   Formation trends in quantum dot growth using metalorganic chemical vapor deposition [J].
El-Emawy, AA ;
Birudavolu, S ;
Wong, PS ;
Jiang, YB ;
Xu, H ;
Huang, S ;
Huffaker, DL .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3529-3534
[3]   Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer [J].
He, J ;
Zhang, YC ;
Xu, B ;
Wang, ZG .
JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) :49-54
[4]   Manipulations of size and density of self-assembled quantum dots grown by MOVPE [J].
Johansson, J ;
Carlsson, N ;
Seifert, W .
PHYSICA E, 1998, 2 (1-4) :667-671
[5]   ALGAAS GROWTH USING TRIMETHYL AND TRIETHYL COMPOUND SOURCES [J].
MIZUTA, M ;
IWAMOTO, T ;
MORIYAMA, F ;
KAWATA, S ;
KUKIMOTO, H .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :142-147
[6]   Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy:: Effect on the lasing properties [J].
Passaseo, A ;
De Vittorio, M ;
Todaro, MT ;
Tarantini, I ;
De Giorgi, M ;
Cingolani, R ;
Taurino, A ;
Catalano, M ;
Fiore, A ;
Markus, A ;
Chen, JX ;
Paranthoen, C ;
Oesterle, U ;
Ilegems, M .
APPLIED PHYSICS LETTERS, 2003, 82 (21) :3632-3634
[7]   Kinetically limited quantum dot formation on AlAs(100) surfaces [J].
Pierz, K ;
Ma, Z ;
Keyser, UF ;
Haug, RJ .
JOURNAL OF CRYSTAL GROWTH, 2003, 249 (3-4) :477-482
[8]   Aluminium incorporation for growth optimization of 1.3 μm emission InAs/GaAs quantum dots by molecular beam epitaxy [J].
Wei, YQ ;
Wang, SM ;
Ferdos, F ;
Vukusic, J ;
Zhao, QX ;
Sadeghi, M ;
Larsson, A .
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :172-176
1