Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes

被引：19
|
作者：
Fang, Fang [1 ,2 ]
Zhao, Dongxu [1 ]
Li, Binghui [1 ]
Zhang, Zhenzhong [1 ]
Shen, Dezhen [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Changchun Univ Sci & Technol, Changchun 130022, Peoples R China
来源：
PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2010年 / 12卷 / 25期
基金：
中国国家自然科学基金;
关键词：
ZINC-OXIDE; BULK ZNO; NANOWIRES; PHOTOLUMINESCENCE; DIFFUSIVITY; ARRAYS;
D O I：
10.1039/b919079a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Through a facile low-temperature solution process, vertically n-type ZnO nanorod arrays were grown on a GaN film to form a n-ZnO nanorod/p-GaN film heterojunction. A study of the electroluminescence (EL) characteristics of the heterojunction in air and in air with 2000 ppm hydrogen revealed the sensitivity of such a device to the surrounding atmosphere. The additional hydrogen shallow donors increased the effective electron concentration in ZnO nanorods and the EL recombination zone changed from the ZnO nanorods to the GaN film, which can be identified visually from the color change.
引用
收藏
页码：6759 / 6762
页数：4
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