Simulation of the dc plasma in carbon nanotube growth

被引：52
作者：
Hash, D [1 ]
Bose, D
Govindan, TR
Meyyappan, M
机构：
[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA
[2] Eloret Corp, Moffett Field, CA USA
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期
关键词：
D O I：
10.1063/1.1568155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics. (C) 2003 American Institute of Physics.
引用
收藏
页码：6284 / 6290
页数：7
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