Synthesis and characterization of copper doped zinc telluride thin films

被引:49
作者
John, VS [1 ]
Mahalingam, T
Chu, JP
机构
[1] TDMNS Coll, Dept Phys, T Kallikulam 627113, Tamil Nadu, India
[2] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[3] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 202, Taiwan
关键词
zinc telluride; Cu doping; X-ray diffraction; optical; morphology; resistivity;
D O I
10.1016/j.sse.2004.07.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Copper doped zinc telluride (ZnTe:Cu) thin films have been synthesized by an electrodeposition technique from acidic aqueous bath containing ZnSO4, TeO2 and CuSO4. The reaction mechanism has been studied by cyclic voltammetry to identify the deposition potential of ZnTe and ZnTe:Cu. X-ray diffraction as well as SEM techniques have been employed to investigate the structure and surface morphology of as-deposited and doped films. Optical properties, such as transmission, refractive index and band gap have been analyzed. The drastic change in resistivity has been observed due to incorporation of Cu dopent and the results are discussed in detail. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3 / 7
页数:5
相关论文
共 18 条
[1]  
[Anonymous], 1996, J ELECTROCHEM SOC
[2]   Properties of copper-doped ZnTe thin films by immersion in Cu solution [J].
Aqili, AKS ;
Maqsood, A ;
Ali, Z .
APPLIED SURFACE SCIENCE, 2001, 180 (1-2) :73-80
[3]   Study of ZnTe thin films deposited by r.f. sputtering [J].
Bellakhder, H ;
Outzourhit, A ;
Ameziane, EL .
THIN SOLID FILMS, 2001, 382 (1-2) :30-33
[4]   Effect of Cu-doping on the morphology of ZnTe films electrodeposited from nonaqueous bath [J].
Chaure, NB ;
Nair, JP ;
Jayakrishnan, R ;
Ganesan, V ;
Pandey, RK .
THIN SOLID FILMS, 1998, 324 (1-2) :78-84
[5]  
CHENG KL, 1961, ANAL CHEM, V33, P761
[6]  
Cullity B. D., 2003, ELEMENTS XRAY DIFFRA
[7]   ELECTRICAL-CONDUCTIVITY OF AIR-EXPOSED AND UNEXPOSED LEAD-TELLURIDE THIN-FILMS - TEMPERATURE AND SIZE EFFECTS [J].
DAS, VD ;
BHAT, KS .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1989, 22 (01) :162-168
[8]   Cathodoluminescence microscopy and photoluminescence of defects in ZnTe [J].
Fernandez, P ;
Garcia, JA ;
Remon, A ;
Piqueras, J ;
Munoz, V ;
Triboulet, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (04) :410-416
[9]   DEVELOPMENT OF RF-SPUTTERED, CU-DOPED ZNTE FOR USE AS A CONTACT INTERFACE LAYER TO P-CDTE [J].
GESSERT, TA ;
MASON, AR ;
REEDY, RC ;
MATSON, R ;
COUTTS, TJ ;
SHELDON, P .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (10) :1443-1449
[10]  
GESSERT TA, 1993, P 12 NREL PHOT PROGR, P345