High-performance InOx/GaOx bilayer channel thin-film transistors made using persistent high-surface-energy induced by photochemical activation

被引：9
作者：
Lee, Woobin [1 ]
Kim, Jiwan [2 ]
Kim, Yong-Hoon [1 ,3 ]
机构：
[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
[2] Kyonggi Univ, Dept Adv Mat Engn, Suwon 16227, South Korea
[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 723卷
基金：
新加坡国家研究基金会;
关键词：
Metal-oxide; Bilayer; Persistent high surface-energy; Photochemical activation; LOW-TEMPERATURE; SOL-GEL; OXIDE; ZNO; MOBILITY; ROUTE;
D O I：
10.1016/j.jallcom.2017.06.188
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, we report high-mobility InOx/GaOx bilayer channel thin-film transistors (TFTs) fabricated using the persistent high-surface-energy characteristic of photochemically activated metal-oxide films. The photochemically-activated metal-oxide films exhibited persistent high surface-energy characteristics compared to a thermally annealed film, which enabled the facile vertical stacking of oxide films using a solution-based process. By using the photochemical activation process as an annealing method and by employing an InOx/GaOx bilayer channel structure, high-mobility oxide TFTs with saturation field-effect mobilities as high as 15.7 cm(2)/V-s were obtained with an average value of 11.2 +/- 1.9 cm(2)/V-s. Various spectroscopic and surface analyses were performed to elucidate the persistent high surface-energy behavior and the dynamic changes in surface states. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：627 / 632
页数：6
相关论文
共 26 条
[1]   Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors [J].
Ahn, Cheol Hyoun ;
Senthil, Karuppanan ;
Cho, Hyung Koun ;
Lee, Sang Yeol .
SCIENTIFIC REPORTS, 2013, 3
[2]  
Banger KK, 2011, NAT MATER, V10, P45, DOI [10.1038/nmat2914, 10.1038/NMAT2914]
[3]   High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors [J].
Banger, Kulbinder K. ;
Peterson, Rebecca L. ;
Mori, Kiyotaka ;
Yamashita, Yoshihisa ;
Leedham, Timothy ;
Sirringhaus, Henning .
CHEMISTRY OF MATERIALS, 2014, 26 (02) :1195-1203
[4]   UV light-induced changes to the surface conduction in hydrothermal ZnO [J].
Claflin, B. ;
Look, D. C. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03) :1722-1725
[5]   High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics [J].
Esro, Mazran ;
Vourlias, George ;
Somerton, Christopher ;
Milne, William I. ;
Adamopoulos, George .
ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (01) :134-141
[6]   Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution [J].
Faber, Hendrik ;
Das, Satyajit ;
Lin, Yen-Hung ;
Pliatsikas, Nikos ;
Zhao, Kui ;
Kehagias, Thomas ;
Dimitrakopulos, George ;
Amassian, Aram ;
Patsalas, Panos A. ;
Anthopoulos, Thomas D. .
SCIENCE ADVANCES, 2017, 3 (03)
[7]   Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis [J].
Faber, Hendrik ;
Lin, Yen-Hung ;
Thomas, Stuart R. ;
Zhao, Kui ;
Pliatsikas, Nikos ;
McLachlan, Martyn A. ;
Amassian, Aram ;
Patsalas, Panos A. ;
Anthopoulos, Thomas D. .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (01) :782-790
[8]   Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].
Fortunato, E. ;
Barquinha, P. ;
Martins, R. .
ADVANCED MATERIALS, 2012, 24 (22) :2945-2986
[9]   Low-temperature, solution-processed metal oxide thin film transistors [J].
Jeong, Sunho ;
Moon, Jooho .
JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (04) :1243-1250
[10]   Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors [J].
Jo, Jeong-Wan ;
Kim, Jaekyun ;
Kim, Kyung-Tae ;
Kang, Jin-Gu ;
Kim, Myung-Gil ;
Kim, Kwang-Ho ;
Ko, Hyungduk ;
Kim, Yong-Hoon ;
Park, Sung Kyu .
ADVANCED MATERIALS, 2015, 27 (07) :1182-1188
123