Field-effect modulation of resistance in VO2 thin film at lower temperature

被引：20

作者：

Belyaev, Maksim A. ^{[1
]}

Putrolaynen, Vadim V. ^{[1
]}

Velichko, Andrey A. ^{[1
]}

Stefanovich, Genrikh B. ^{[1
]}

Pergament, Alexander L. ^{[1
]}

机构：

[1] Petrozavodsk State Univ, Petrozavodsk 185910, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 11期

关键词：

METAL-INSULATOR-TRANSITION; MOTT TRANSITION; ELECTRIC-FIELD; PHASE-TRANSITION;

D O I：

10.7567/JJAP.53.111102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper we describe a prototype of a field effect transistor (FET) based on the Mott metal-insulator transition (MIT) in vanadium dioxide. It has been shown that increasing the modulation of the channel resistance, the gain of the field effect, and an increase of the amplification factor can be achieved by lowering the temperature of the channel. An increase of the transistor amplification factor by more than twice is shown while reducing the temperature from RT down to -21 degrees C. It is also shown that the modulation of the channel resistance is not associated with the occurrence of dynamic current through the gate insulator and the VO2-channel. Possible solutions to increase the efficiency of the VO2-based FET are analyzed L and described. (C) 2014 The Japan Society of Applied Physics

引用

页数：6

共 36 条

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