Design method for fully integrated CMOS RF LNA

被引：6
|
作者：
Egels, M
Gaubert, J
Pannier, P
Bourdel, S
机构：
[1] L2MP UMR CNRS 6137, Polytech 'Marseille, IMT Technop. de Chateau Gombert
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 24期
关键词：
D O I：
10.1049/el:20046396
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 Omega input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 mum RF CMOS process.
引用
收藏
页码：1513 / 1514
页数：2
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