Enhanced electrical conductivity of indium tin oxide films by Ag addition

被引：8
作者：
Suzuki, M
Maeda, Y
Sawada, Y
机构：
[1] Kojundo Chem Lab Co Ltd, Sakado, Saitama 35002, Japan
[2] Tokyo Inst Polytech, Fac Engn, Dept Ind Chem, Kanagawa 243, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期
关键词：
thin film; transparent electrode; Sn-doped In2O3; ITO; Ag addition; sputtering; electrical conductivity; transparency; crystallinity;
D O I：
10.1143/JJAP.37.34
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ag-added indium-tin-oxide (ITO) films were prepared using conventional radio frequency (rf) magnetron sputtering with an ITO target on which Ag chips were placed. A small amount of Ag addition (< 1 at.%) lowered the resistivity by similar to 30% with only a slight decrease in the visible range transparency. The enhancement in conductivity was equivalent to lowering the substrate temperature by similar to 50 degrees C. At a substrate temperature of 250 degrees C, the resistivity (rho) of 2.0 x 10(-4) Omega cm with a carrier density (n) of 7.1 x 10(20) cm(-3) and Hall mobility (mu) of 44 cm(2)V(-1)s(-1) was obtained for the ITO (8.1 at.% Sn) film with 0.6 at.% Ag, whereas rho = 2.8 x 10(-4) Omega cm with n = 4.9 x 10(20) cm(-3) and mu = 46 cm(2)V(-1)s(-1) was obtained for the ITO film without Ag addition. The Ag addition enhanced the crystallinity and the densification of the film. The enhanced electrical conductivity due to Ag addition is explained by the increase in the efficiency of Sn doping.
引用
收藏
页码：34 / 38
页数：5
相关论文
共 50 条
[21]   Size Effects on the Cross-Plane Thermal Conductivity of Transparent Conducting Indium Tin Oxide and Fluorine Tin Oxide Thin Films [J].
Olson, David H. ;
Rost, Christina M. ;
Gaskins, John T. ;
Szwejkowski, Chester J. ;
Braun, Jeffrey L. ;
Hopkins, Patrick E. .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2019, 9 (01) :51-57
[22]   ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices [J].
Kim, Dae-Hyun ;
Lee, Han-Kyeol ;
Na, Jin-Young ;
Kim, Sun-Kyung ;
Yoo, Young-Zo ;
Seong, Tae-Yeon .
SUPERLATTICES AND MICROSTRUCTURES, 2015, 83 :635-641
[23]   Effect of indium content on the characteristics of indium tin oxide thin films [J].
Navya, K. ;
Bharath, S. P. ;
Bangera, Kasturi, V ;
Shivakumar, G. K. .
MATERIALS RESEARCH EXPRESS, 2018, 5 (09)
[24]   In-situ observation of the electrical conductivity upon release and uptake of oxygen in indium tin oxide sinter [J].
Omata, T ;
Fujiwara, H ;
Otsuka-Yao-Matsuo, S ;
Ono, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3A) :868-871
[25]   Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films [J].
Guisheng Zhu ;
Li Zhi ;
Huijuan Yang ;
Huarui Xu ;
Aibing Yu .
Journal of Electronic Materials, 2012, 41 :2376-2379
[26]   Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films [J].
Kamei, M ;
Enomoto, H ;
Yasui, I .
THIN SOLID FILMS, 2001, 392 (02) :265-268
[27]   Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films [J].
Zhu, Guisheng ;
Zhi, Li ;
Yang, Huijuan ;
Xu, Huarui ;
Yu, Aibing .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (09) :2376-2379
[28]   The electromagnetic shielding effectiveness of indium tin oxide films [J].
Huang, JL ;
Yau, BS ;
Chen, CY ;
Lo, WT ;
Lii, DF .
CERAMICS INTERNATIONAL, 2001, 27 (03) :363-365
[29]   Optical and electrical properties of indium tin oxide (ITO) nanostructured thin films deposited on polycarbonate substrates "thickness effect" [J].
Eshaghi, Akbar ;
Graeli, Alireza .
OPTIK, 2014, 125 (03) :1478-1481
[30]   Surface-dependent conductivity, transition type, and band structure in amorphous indium tin oxide films [J].
Wang, Yaqin ;
Tang, Wu .
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
12345