Resonant tunneling at electron field emission from Si tips coated with SiO2(Si) films

被引：2
|
作者：
Evtukh, A. A. [1 ,2 ]
Pylypova, O., V [2 ]
Martyniuk, O. [1 ]
Mimura, H. [3 ]
机构：
[1] V Lashkaryov Inst Semicond Phys NAS Ukraine, 41 Pr Nauki, UA-03028 Kiev, Ukraine
[2] Taras Shevchenko Natl Univ Kyiv, Inst High Technol, Kiev, Ukraine
[3] Shizuoka Univ, Res Inst Elect, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka, Japan
来源：
APPLIED NANOSCIENCE | 2018年 / 8卷 / 05期
关键词：
Electron field emission; Resonant tunneling; Si nanocrystals; Nanocomposite SiO2(Si) films; SILICON NANOWIRES;
D O I：
10.1007/s13204-018-0710-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electron field emission from Si tips coated with ultrathin nanocomposite SiO2(Si) films containing Si nanocrystals embedded into silicon dioxide matrix of varying thickness have been investigated. The peaks in emission current-voltage characteristics have been observed in case of some definite thicknesses of the films. The observed experimental results have been explained on base of resonance tunneling through multilayer structure containing SiO2 sublayer from one (inner) side and SiO2 sublayer + vacuum from outer side as the barriers and Si nanocrystals as the quantum well. The fitting of theoretical modeling to experimental results allowed to clarify some details of the nanostructure.
引用
收藏
页码：931 / 935
页数：5
相关论文
共 50 条
  • [41] Si-nanocrystals/SiO2 thin films obtained by pyrolysis of sol-gel precursors
    Das, G.
    Ferraioli, L.
    Bettotti, P.
    De Angelis, F.
    Mariotto, G.
    Pavesi, L.
    Di Fabrizio, E.
    Soraru, G. D.
    THIN SOLID FILMS, 2008, 516 (20) : 6804 - 6807
  • [42] ELECTRON FIELD EMISSION FROM NANO-CRYSTALLINE SI FILMS DEPOSITED BY INDUCTIVELY COUPLED PLASMA CVD AT ROOM TEMPERATURE
    A. V. KARABUTOV
    A. G. KAZANSKII
    Chinese Science Bulletin, 2006, (05) : 510 - 514
  • [43] Enhanced field emission characteristics in metal-coated Si-nanocones
    Chang, Yuan-Ming
    Kao, Pin-Hsu
    Tai, Hung-Ming
    Wang, Hau-Wei
    Lin, Chih-Ming
    Lee, Hsin-Yi
    Juang, Jenh-Yih
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2013, 15 (26) : 10761 - 10766
  • [44] Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature
    He, DY
    Wang, XQ
    Chen, Q
    Li, JS
    Yin, M
    Karabutov, AV
    Kazanskii, AG
    CHINESE SCIENCE BULLETIN, 2006, 51 (05): : 510 - 514
  • [45] Electron field emission characteristics of electrochemical etched Si tip array
    Ng, KL
    Yuan, J
    Cheung, JT
    Cheah, KW
    SOLID STATE COMMUNICATIONS, 2002, 123 (05) : 205 - 207
  • [46] Optical and electrical properties of Si nanocrystals embedded in SiO2 layers
    Lee, S
    Shim, YS
    Cho, HY
    Kim, DY
    Kim, TW
    Wang, KL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7180 - 7183
  • [47] Inherent paramagnetic defects in layered nanocrystalline Si/SiO2 superstructures
    Jivanescu, M.
    Stesmans, A.
    Zacharias, M.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06) : 947 - 950
  • [48] Implantation of P ions in SiO2 layers with embedded Si nanocrystals
    Kachurin, GA
    Cherkova, SG
    Volodin, VA
    Kesler, VG
    Gutakovsky, AK
    Cherkov, AG
    Bublikov, A
    Tetelbaum, DI
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (3-4) : 497 - 504
  • [49] Effective band gap of Si nanocrystals embedded in SiO2 matrix
    Baskoutas, Sotirios
    Kapaklis, Vassilios
    Schommers, Wolfram
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2006, 6 (07) : 2037 - 2041
  • [50] Multiphonon relaxation of moderately excited carriers in Si/SiO2 nanocrystals
    Moskalenko, A. S.
    Berakdar, J.
    Poddubny, A. N.
    Prokofiev, A. A.
    Yassievich, I. N.
    Goupalov, S. V.
    PHYSICAL REVIEW B, 2012, 85 (08)
12345