Resonant tunneling at electron field emission from Si tips coated with SiO2(Si) films

被引：2
|
作者：
Evtukh, A. A. [1 ,2 ]
Pylypova, O., V [2 ]
Martyniuk, O. [1 ]
Mimura, H. [3 ]
机构：
[1] V Lashkaryov Inst Semicond Phys NAS Ukraine, 41 Pr Nauki, UA-03028 Kiev, Ukraine
[2] Taras Shevchenko Natl Univ Kyiv, Inst High Technol, Kiev, Ukraine
[3] Shizuoka Univ, Res Inst Elect, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka, Japan
来源：
APPLIED NANOSCIENCE | 2018年 / 8卷 / 05期
关键词：
Electron field emission; Resonant tunneling; Si nanocrystals; Nanocomposite SiO2(Si) films; SILICON NANOWIRES;
D O I：
10.1007/s13204-018-0710-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electron field emission from Si tips coated with ultrathin nanocomposite SiO2(Si) films containing Si nanocrystals embedded into silicon dioxide matrix of varying thickness have been investigated. The peaks in emission current-voltage characteristics have been observed in case of some definite thicknesses of the films. The observed experimental results have been explained on base of resonance tunneling through multilayer structure containing SiO2 sublayer from one (inner) side and SiO2 sublayer + vacuum from outer side as the barriers and Si nanocrystals as the quantum well. The fitting of theoretical modeling to experimental results allowed to clarify some details of the nanostructure.
引用
收藏
页码：931 / 935
页数：5
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