On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

被引：5

作者：

Rodrigues, Isabel Harrysson ^{[1
]}

Niepce, David ^{[2
]}

Pourkabirian, Arsalan ^{[3
]}

Moschetti, Giuseppe ^{[3
,5
]}

Schleeh, Joel ^{[3
]}

Bauch, Thilo ^{[4
]}

Grahn, Jan ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, GigaHertz Ctr, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Quantum Technol Lab, SE-41296 Gothenburg, Sweden

[3] Low Noise Factory AB, Nellickevagen 22, SE-41663 Gothenburg, Sweden

[4] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Quantum Device Phys Lab, SE-41296 Gothenburg, Sweden

[5] Qamcom Res & Technol AB, Falkenbergsgatan 3, SE-41285 Gothenburg, Sweden

来源：

AIP ADVANCES | 2019年 / 9卷 / 08期

关键词：

TEMPERATURE;

D O I：

10.1063/1.5107493

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT when oriented in a magnetic field at 2 K ambient temperature up to 14 T. A sharp angular dependence as a function of the magnetic field was measured for the output current of the InP HEMT. This was accurately described by a geometrical magnetoresistance expression for all angles and magnetic field strengths. Key device parameters such as transconductance and on-resistance were significantly affected at small angles and magnetic fields. The strong angular dependence of the InP HEMT output current in a magnetic field has important implications for the alignment of cryogenic LNAs in microwave detection experiments involving magnetic fields. (C) 2019 Author(s).

引用

页数：4

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