Experimental investigation of transient enhanced diffusion (TED) of phosphorus implants in silicon in the MeV range

被引：0

作者：

Adam, LS ^{[1
]}

Law, ME ^{[1
]}

机构：

[1] Univ Florida, Dept ECE, Gainesville, FL 32611 USA

来源：

DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷

关键词：

D O I：

10.1557/PROC-469-309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Prior work has concentrated on TED resulting from sub 200 KeV implants. However, the results applicable to the low energy regime cannot be extrapolated per se into the high energy regime. Furnace anneals have been performed and through simulations it has been observed that there is a differential diffusivity enhancement between the parr of the profile before the profile peak and that beyond the profile peak. Longer saturation times compared to the low energy implants have also been observed.

引用

页码：309 / 314

页数：6