Novel attributes and design considerations of source and drain regions in carbon nanotube transistors

被引：6

作者：

Orouji, Ali A. ^{[1
]}

Ahmadmiri, S. A. ^{[1
]}

机构：

[1] Semnan Univ, Dept Elect Engn, Semnan, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 05期

关键词：

Carbon nanotube; Field effect transistor; Transcondctance; Nonequilibrium Green's function (NEGF); QUANTUM TRANSPORT; SINGLE; ELECTROSTATICS;

D O I：

10.1016/j.physe.2009.11.118

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Source and drain regions are inseparable sections of carbon nanotube field effect transistor (CNTFET) whose parameters are effective for CNTFET performance. For the first time in this paper, design considerations of source and drain regions are presented by developing a two-dimensional (2-D) full quantum simulation. The simulations have been done by the self-consistent solution of 2-D Poisson-Schrodinger equations, within the nonequilibrium Green's function (NEGF) formalism. The effects of varying the source and drain parameters are investigated in terms of on-off current ratio, transconductance characteristics, drain conductance, and subthreshold swing. Simulation results demonstrate that we could improve the CNTFET performance with proper selection of the source and drain parameters. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1456 / 1462

页数：7

共 29 条

[1] Role of doping in carbon nanotube transistors with source/drain underlaps
Alam, Khairul
Lake, Roger
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (06) : 652 - 658
[2] Hetero-junction carbon nanotube FET with lightly doped drain and source regions
Yousefi, Reza
Doorzad, Leila
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2016, 30 (04):
[3] Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping
Arefinia, Zahra
Orouji, Ali A.
SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (06) : 535 - 546
[4] Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors
Yousefi, Reza
Saghafi, Kamyar
Moravvej-Farshi, Mohammad Kazem
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (04) : 765 - 771
[5] The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials
Xiao, Z.
Camino, F. E.
NANOTECHNOLOGY, 2009, 20 (13)
[6] Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
Knoch, J
Mantl, S
Appenzeller, J
SOLID-STATE ELECTRONICS, 2005, 49 (01) : 73 - 76
[7] Improving the Performance of a Doping-Less Carbon Nanotube FET with Dual Junction Source and Drain Regions: Numerical Studies
Ghodrati, Maryam
Mir, Ali
JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2022, 31 (10)
[8] Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine
Chang-Jian, Shiang-Kuo
Ho, Jeng-Rong
Cheng, J. -W. John
MICROELECTRONIC ENGINEERING, 2010, 87 (10) : 1973 - 1977
[9] NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
Faez, Rahim
Hosseini, Seyed Ebrahim
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2009, 23 (19): : 3669 - 3678
[10] Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics
Arefinia, Zahra
Orouji, Ali A.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (10) : 3068 - 3071

← 1 2 3 →