A 1-V 1.6-GS/s 5.58-ENOB CMOS Flash ADC using Time-Domain Comparator

被引：1

作者：

Lee, Han-Yeol ^{[1
]}

Jeong, Dong-Gil ^{[1
]}

Hwang, Yu-Jeong ^{[1
]}

Lee, Hyun-Bae ^{[2
]}

Jang, Young-Chan ^{[1
]}

机构：

[1] Kumoh Natl Inst Technol, Sch Elect Engn, 61 Daehak Ro, Gumi 39177, Gyungbuk, South Korea

[2] SK Hynix Semicond Inc, Inchon, Gyeonggi, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2015年 / 15卷 / 06期

关键词：

Flash ADC; high-speed time-domain comparator; time interpolation; low power;

D O I：

10.5573/JSTS.2015.15.6.695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1-V 1.6-GS/s 5.58-ENOB flash ADC with a high-speed time-domain comparator is proposed. The proposed time-domain comparator, which consumes low power, improves the comparison capability in high-speed operations and results in the removal of preamplifiers from the first-stage of the flash ADC. The time interpolation with two factors, implemented using the proposed time-domain comparator array and SR latch array, reduces the area and power consumption. The proposed flash ADC has been implemented using a 65-nm 1-poly 8-metal CMOS process with a 1-V supply voltage. The measured DNL and INL are 0.28 and 0.41 LSB, respectively. The SNDR is measured to be 35.37 dB at the Nyquist frequency. The FoM and chip area of the flash ADC are 0.38 pJ/c-s and 620 x 340 mu m(2), respectively.

引用

页码：695 / 702

页数：8

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