High Performance Ultrathin SnO2 Thin-Film Transistors by Sol-Gel Method

被引：33

作者：

Jang, Bongho ^{[1
]}

Kim, Taegyun ^{[1
]}

Lee, Sojeong ^{[1
]}

Lee, Won-Yong ^{[1
]}

Kang, Hongki ^{[2
,3
]}

Cho, Chan Seob ^{[1
]}

Jang, Jaewon ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Bio & Brain Engn, Daejeon 34141, South Korea

[3] Korea Adv Inst Sci & Technol, Informat & Elect Res Inst, Daejeon 34141, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Sol-gel; SnO2; thin film transistors; quantum confinement; LAYER;

D O I：

10.1109/LED.2018.2849689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sol-gel processed ultrathin nanostructured SnO2 thin-film transistors were successfully fabricated on a SiO2 /Si substrate without using a self-aligned monolayer or high-k insulator, which may be unsuitable techniques for the commercial fabrication of complementary metal-oxide-semiconductors. The highest extracted field mobilitywas approximately 100cm(2)/V.s. In addition, by controlling the SnO2 film thickness, we successfully increased the on/off current ratio to similar to 107. The electrical performance of the proposed transistors is sufficient for high-resolution liquid crystal or organic light-emitting diode displays, which require a high field-effect mobility (>10 cm(2)/V.s) and high on/off current ratio (>106). Ultrathin SnO2 is also a promising rare-metal-free starting matrix for ternary and quaternary alloys, showing promising electric properties.

引用

页码：1179 / 1182

页数：4

共 19 条

[1] Transparent thin-film transistors with zinc indium oxide channel layer [J].