共 50 条
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Intrinsic Dielectric Stack Reliability of a High Performance Bulk Planar 20nm Replacement Gate High-K Metal Gate Technology and Comparison to 28nm Gate First High-K Metal Gate Process
[J].
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),
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Organic Mask Removal Assessment For 32nm Fully Depleted SOI Technology With TiN-Metal Gate On HfO2
[J].
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6,
2008, 16 (05)
:355-+
[25]
Capacitance behavior of nanometer FD SOICMOS devices with HfO2 high-K gate dielectric considering gate tunneling leakage current
[J].
2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS,
2006,
:61-+