Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

被引：12
作者：
Hong, Hyun-Gi
Kim, S. -S.
Kim, D. -Y.
Lee, Takhee
Kim, Kyoung-Kook
Song, June-O
Cho, J. H.
Seong, Tae-Yeon [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea
[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 03期
关键词：
D O I：
10.1002/pssa.200622352
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of rapid-thermal-annealing on the performance of near-UV GaN-based light-emitting diodes (LEDs) fabricated with nano-patterned p-type electrodes has been investigated. One-dimensional (I-D) nano-patterns were formed on Cu-doped indium oxide (CIO)/indium tin oxide (ITO) p-electrode by surface relief grating and dry etching techniques. After the nano-patterning, some of the samples are rapid-thermal-annealed at 530 and 630 degrees C in either air or nitrogen ambient. LEDs made with samples annealed 530 degrees C show much better electrical characteristics as compared to unannealed samples. In particular, LEDs with samples annealed 530 degrees C in air show higher output power (at 20 mA) and much reduced leakage current as compared to LEDs with unannealed samples. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：881 / 886
页数：6
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