A new generation of power unipolar devices:: the concept of the FLoating islands MOS transistor (FLIMOST)

被引：33

作者：

Cézac, N ^{[1
]}

Morancho, F ^{[1
]}

Rossel, P ^{[1
]}

Tranduc, H ^{[1
]}

Peyre-Lavigne, A ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjonction" MOS Transistor family : this comparison shows the strong interest of the FLIMOSFET in the 200 V - 1000 V breakdown voltage range.

引用

页码：69 / 72

页数：4

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