A new generation of power unipolar devices:: the concept of the FLoating islands MOS transistor (FLIMOST)

被引：33

作者：

Cézac, N ^{[1
]}

Morancho, F ^{[1
]}

Rossel, P ^{[1
]}

Tranduc, H ^{[1
]}

Peyre-Lavigne, A ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjonction" MOS Transistor family : this comparison shows the strong interest of the FLIMOSFET in the 200 V - 1000 V breakdown voltage range.

引用

页码：69 / 72

页数：4

共 10 条

[1]

BALIGA BJ, 1987, MODERN POWER DEVICES

[2] HIGH-VOLTAGE POWER MOSFETS WITH A TRENCH-GATE STRUCTURE [J].

CHANG, HR ;

HOLROYD, FW .

SOLID-STATE ELECTRONICS, 1990, 33 (03) :381-386

[3]

DEBOY G, 1998, IEDM

[4] Simulated superior performances of semiconductor superjunction devices [J].

Fujihara, T ;

Miyasaka, Y .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :423-426

[5] Theory of semiconductor superjunction devices [J].

Fujihira, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10) :6254-6262

[6]

HU C, 1979, 1979 IEEE POW EL SPE, P385

[7]

LORENZ L, 1998, P POW CONV MAY

[8]

*SILV INT, 1995, US MAN

[9] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

SZE, SM ;

GIBBONS, G .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&

[10]

Ueda D, 1984, IEEE T ELECTRON DEV, V31, P2

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