Recent Progress in Crystal Growth of Bulk GaN

被引：5

作者：

Bockowski, M. ^{[1
]}

Grzegory, I ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2022年 / 141卷 / 03期

基金：

欧盟地平线“2020”;

关键词：

crystal growth from solution; crystal growth from gas phase; gallium nitride (GaN); VAPOR-PHASE EPITAXY; GALLIUM NITRIDE; HIGH-PRESSURE; HVPE-GAN; QUALITY; N-2;

D O I：

10.12693/APhysPolA.141.167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

State of the art in crystallization of bulk GaN is reviewed and discussed. Fundamental physical barriers making crystal growth of GaN difficult are indicated. The Na-flux, ammonothermal and halide vapor phase epitaxy methods are presented as the most advanced and promising ones. The high nitrogen pressure solution approach developed at IHPP PAS is mentioned as a starting point of bulk GaN research.

引用

页码：167 / 174

页数：8

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