Phosphorous-doped hydrogenated nano-crystalline silicon film prepared by PECVD

被引：0

作者：

Liu, M ^{[1
]}

Wang, Z ^{[1
]}

Pang, YC ^{[1
]}

He, YL ^{[1
]}

Jiang, XL ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Beijing 100083, Peoples R China

来源：

THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷

关键词：

nano-crystalline silicon; phosphorous-doping; conductivity;

D O I：

10.1117/12.300678

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phosphorous-doped nano-crystalline silicon films have been prepared by plasma enhanced chemical vapor deposition(PECVD) system. Detailed results on dark electrical conductivity, Raman spectra, infrared absorption spectra, hydrogen content are presented The doped sample's grain size and it's volume fraction is little related to doped concentration, whereas, the room-temperature conductivity of doped samples changed as doped concentration increased from 10(-4)10(-1); it's value can reach to maximum value of 3.57 Omega(-1) cm(-1) when PH3/SiH4 = 2 x 10(-2). The conductivity activation energy of doped sample is smaller than that of undoped nc-Si:H film and hydrogen content is about 10-15%, also smaller than that of nc-Si:H film.

引用

页码：244 / 246

页数：3