Cosmic-ray soft error rate characterization of a standard 0.6-μm CMOS process

被引：54

作者：

Hazucha, P ^{[1
]}

Svensson, C

Wender, SA

机构：

[1] Linkoping Univ, S-58183 Linkoping, Sweden

[2] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 10期

关键词：

circuit reliability; integrated circuit design; manufacturing process characterization; memory testing; particle beams; single event upset; soft error rate;

D O I：

10.1109/4.871318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cosmic-ray soft errors from ground le, el to aircraft flight altitudes are caused mainly by neutrons. We derived an empirical model for estimation of soft error rate (SER). Test circuits were fabricated in a standard 0.6-mu m CMOS process. The neutron SER dependence on the critical charge and supply voltage was measured. Time constants of the noise current were extracted from the measurements and compared with device simulations in three dimensions. The empirical model was calibrated and verified by independent SER measurements. The model is capable of predicting cosmic-ray neutron SER of any circuit manufactured in the same process as the test circuits. We predicted SER of a static memory cell.

引用

页码：1422 / 1429

页数：8