Passively modelocked vertical extended cavity surface emitting diode laser

被引：32
作者：
Jasim, K [1 ]
Zhang, Q
Nurmikko, AV
Mooradian, A
Carey, G
Ha, W
Ippen, E
机构：
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Brown Univ, Dept Phys, Providence, RI 02912 USA
[3] Novalux Inc, Sunnyvale, CA 94086 USA
[4] MIT, Dept Comp Sci & Elect Engn, Cambridge, MA 02139 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 04期
关键词：
D O I：
10.1049/el:20030240
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Passive modelocking of a surface emitting diode laser is demonstrated using an extended cavity concept which permits the incorporation of a saturable Bragg reflector mirror into a device designed for large aperture operation as a high-power 980 nm InGaAs multiple quantum-well vertical cavity source.
引用
收藏
页码：373 / 375
页数：3
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