Study of Scandium Nitride Thin Films Deposited using Ion Beam Sputtering

被引：1

作者：

Chowdhury, Susmita ^{[1
]}

Gupta, Rachana ^{[1
]}

Prakash, Shashi ^{[1
]}

Behera, Layanta ^{[2
]}

Phase, D. M. ^{[2
]}

Gupta, Mukul ^{[2
]}

机构：

[1] DAVV, Inst Engn & Technol, Khandwa Rd, Indore 452017, India

[2] UGC DAE Consortium Sci Res, Khandwa Rd, Indore 452001, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2019 | 2020年 / 2265卷

关键词：

D O I：

10.1063/5.0017351

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, ion beam sputtering technique has been utilized to deposit Sc and ScNx thin film samples. For growth of ScNx samples, N-2 partial pressure (PN2) was varied in small intervals between 5 x 10(-6) to 1.0 x 10(-4) Torr. X-ray reflectivity, x-ray diffraction, x-ray near edge absorption spectroscopy (at N K and Sc L-3,L-2 edges) and resistivity measurements were performed to characterize the samples. We found that samples deposited below PN2 = 2.5 x 10(-5) Torr were under stoichiometric but when PN2 increases to 5 x 10(-5) Torr or beyond, they become over stoichiometric. This reveals that the formation of ScN phase (at 300 K) requires a very precise control of PN2 to achieve stoichiometric ScN.

引用

页数：4

共 21 条

[1] Molecular beam epitaxial growth of atomically smooth scandium nitride films [J].