Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1-101) GaN facet

被引：2

作者：

Kim, EH ^{[1
]}

Narita, T ^{[1
]}

Honda, Y ^{[1
]}

Sawaki, N ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405039

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An InGaN/GaN MQW waveguide was fabricated on a (1-101) facet of MOVPE GaN on a 7 degree off oriented (001)Si substrate. Because of the low growth rate on the facet, we achieved uniform layers with less dislocation density and superior flatness. The optical gain of the stripe structure as a waveguide was analyzed at room temperature. It was found that the optical gain was as high as -20 cm(-1) at a low excitation intensity of 4 kNV/cm(2) even for the photoluminescence peak wavelength of the quantum well. The high optical gain demonstrate the high optical quality of the MQW grown on the facet structure.

引用

页码：2512 / 2515

页数：4

共 12 条

[1] Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE [J].

Honda, Y ;

Kameshiro, N ;

Yamaguchi, M ;

Sawaki, N .

JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :82-86

[2] Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates [J].

Honda, Y ;

Kawaguchi, Y ;

Ohtake, Y ;

Tanaka, S ;

Yamaguchi, M ;

Sawaki, N .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) :346-350

[3] Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer [J].

Iwaya, M ;

Terao, S ;

Hayashi, N ;

Kashima, T ;

Amano, H ;

Akasaki, I .

APPLIED SURFACE SCIENCE, 2000, 159 :405-413

[4] SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KATO, Y ;

KITAMURA, S ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :133-140

[5]

Kawaguchi Y, 1999, PHYS STATUS SOLIDI A, V176, P553, DOI 10.1002/(SICI)1521-396X(199911)176:1<553::AID-PSSA553>3.0.CO

[6]

2-I

[7] Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors [J].

Keller, S ;

Vetury, R ;

Parish, G ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2001, 78 (20) :3088-3090

[8]

NAKAMURA S, 1997, JPN J APPL PHYS, V36, pL1586

[9]

Sawaki N, 2002, VACUUM SCIENCE AND TECHNOLOGY: NITRIDES AS SEEN BY THE TECHNOLOGY 2002, P243

[10] Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy [J].

Tanaka, S ;

Honda, Y ;

Kameshiro, N ;

Iwasaki, R ;

Sawaki, N ;

Tanji, T ;

Ichihashi, M .

JOURNAL OF CRYSTAL GROWTH, 2004, 260 (3-4) :360-365

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