Defect study of heavily n-type doped III-V compound semiconductors by means of pulsed positron beam measurement

被引：1
作者：
Cho, YK
Leem, JY
Lee, C
Noh, SK
Suzuki, R
Odaira, T
Mikado, T
机构：
[1] Korea Res Inst Stand & Sci, New Mat Evaluat Ctr, Taejon 305600, South Korea
[2] Electrotech Lab, Quantum Radiat Div, Ibaraki, Osaka 305, Japan
来源：
POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997 | 1997年 / 255-2卷
关键词：
GaAs; InGaAs; GaN; DX-center; pulsed positron beam; life-time measurement; photoluminescence; double crystal X-ray diffractometry;
D O I：
10.4028/www.scientific.net/MSF.255-257.701
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Defect structure of heavily n-type doped III-V compound semiconductors(GaAs, InGaAs and GaN) was investigated by Pi, method, X-ray double crystal diffractometry and pulsed positron beam life-time measurement. Obtained results showed good coincidence with each method in the point of the formation of vacancy-related defect complex and the certain decrease of vacancy-related defect density with increasing Si concentration. Among them, GaN was showed reversed behavior in positron lifetime spectrum compared to that of previous results.
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页码：701 / 703
页数：3
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