Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films

被引：7

作者：

Chen, CY ^{[1
]}

Chen, WD

Wang, YQ

Song, SF

Xu, ZJ

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 03期

关键词：

E3+; nc-Si; H treatment;

D O I：

10.7498/aps.52.736

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Con-elation between nc-Si, Er3+ and nonradiative defects in Er-doped nc-Si/SiO2 films is studied. Upon the 514.5 run laser excitation, the samples exhibit a nanocrystal-related spectrum centered at around 750 nm and an Er3+ luminescence line at 1.54mum. With increasing Er3+ content in the films,the Er3+ emission becomes intense while the photoluminescence at 750 nm decreases. Hydrogen passivation of the samples is shown to result in increases of the two luminescence peaks. However, the effect of hydrogen treatment is different for the samples annealed at different temperatures. The experimental results show that the coupling between Er3+, nc-Si and noradiative centers has a great influence on photoluminescence from nc-Si/SiO2 < Er > films.

引用

页码：736 / 739

页数：4

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