Model of intrinsic carrier concentration of strained Si/(001)Si1-x Gex

被引：11

作者：

Song Jian-Jun ^{[1
]}

Zhang He-Ming ^{[1
]}

Hu Hui-Yong ^{[1
]}

Dai Xian-Ying ^{[1
]}

Xuan Rong-Xi ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2010年 / 59卷 / 03期

关键词：

strained Si; effective densities of states; intrinsic carrier concentration; BAND;

D O I：

10.7498/aps.59.2064

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

There is great interest in using the strained Si CMOS technology lately for carrier mobility enhancement. Intrinsic carrier concentration is the important physical parameter for the characterization of strained Si materials and the determination of the electrical properties of strained Si-based devices. Starting from analyzing the band structure of strained Si/(001)Si1-xGex, the model of its intrinsic carrier concentration related to Ge fraction (x) at 300 K was established with the frame of K. P theory, which provides valuable reference to the understanding on the strained Si-based device physics and its design.

引用

页码：2064 / 2067

页数：4

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