Monte-Carlo master equation method for a simulation of epitaxial growth dynamics

被引：0
作者：
Nakayama, H
Morishita, T
Ekaitsu, T
Nishino, T
机构：
[1] Kobe Univ, Venture Business Lab, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Fac Engn, Kobe, Hyogo 6578501, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 159卷
关键词：
Monte-Carlo simulation; master equation; atom correlation effects; long-range ordering;
D O I：
10.1016/S0169-4332(00)00139-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Monte-Carlo master equation (MCME) method has been proposed to simulate the structural evolution of epitaxial growth system in relatively large scale (10(3)-10(6) atoms). It enables us to describe the structural evolution of epitaxial growth in both single-element and binary system. Probabilities, such as adsorption, scattering. desorption, atomic-site jump(diffusion), are taken into account in the manner of master equation. which describe a local reaction energetics of growing surface atoms. Growth simulations of three types of conditions: equilibrium, super-cooling and super-saturation, have been made for Si humoepitaxy on Si(001). The results showed the clear difference in the features of growth rate and roughness among these conditions. (C) 2000 Published by Elsevier Science B.V. PACS: 81.10.Aj, 82.20.Wt; 68.45.Da.
引用
收藏
页码：380 / 386
页数：7
相关论文
共 16 条
  • [1] BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE
    BROCKS, G
    KELLY, PJ
    CAR, R
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (13) : 1729 - 1732
  • [2] BROWNIAN-MOTION MODEL OF INTERACTIONS BETWEEN CHEMICAL SPECIES AND METALLIC ELECTRONS - BOOTSTRAP DERIVATION AND PARAMETER EVALUATION
    DAGLIANO, EG
    KUMAR, P
    SCHAICH, W
    SUHL, H
    [J]. PHYSICAL REVIEW B, 1975, 11 (06): : 2122 - 2143
  • [3] MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE
    GAWLINSKI, ET
    GUNTON, JD
    [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4774 - 4781
  • [4] A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth
    Ito, T
    Shiraishi, K
    [J]. SURFACE SCIENCE, 1996, 357 (1-3) : 486 - 489
  • [5] MUELLER H, 1979, Z PHYS B, V34, P165
  • [6] Stochastic growth theory of molecular beam epitaxy with atom correlation effects: A Monte-Carlo master equation method
    Nakayama, H
    Furuichi, A
    Kita, T
    Nishino, T
    [J]. APPLIED SURFACE SCIENCE, 1997, 113 : 631 - 637
  • [7] KINETIC ISING-MODEL OF SITE-CORRELATED ADSORPTION AND SURFACE-DIFFUSION IN MOLECULAR-BEAM EPITAXY
    NAKAYAMA, H
    TOCHIGI, M
    MAEDA, H
    NISHINO, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 168 - 175
  • [8] Growth dynamics and an order-disorder transition in epitaxial alloy semiconductors
    Nakayama, H
    Takeguchi, T
    Nishino, T
    [J]. SURFACE SCIENCE, 1996, 363 (1-3) : 409 - 415
  • [9] Atom correlation and configurational ordering in pseudobinary epitaxial semiconductors
    Nakayama, H
    Takeguchi, T
    Nishino, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 163 (1-2) : 135 - 142
  • [10] CONFIGURATIONAL ATOMIC ORDERING CAUSED BY STOCHASTIC ADSORPTION PROCESSES IN MBE-GROWN ALLOY SEMICONDUCTORS
    NAKAYAMA, H
    TOCHIGI, M
    MAEDA, H
    NISHINO, T
    [J]. APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) : 214 - 222
12