Influence of heat treatment on field emission characteristics of boron nitride thin films

被引：3
作者：
Li, WQ [1 ]
Gu, GR [1 ]
Li, YG [1 ]
He, Z [1 ]
Feng, W [1 ]
Liu, LH [1 ]
Zhao, CH [1 ]
Zhao, YN [1 ]
机构：
[1] Jilin Univ, Natl Key Lab Superhard Mat, Changchun 130023, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2005年 / 239卷 / 3-4期
关键词：
BN films; heat treatment; field emission; annealing temperature; threshold electric fields; negative electron affinity effect; emission current;
D O I：
10.1016/j.apsusc.2004.06.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10(-4) Pa and the temperature of 800 and 1000 degreesC, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/mum and the emission current of 80 muA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 degreesC and disappeared at temperature of 1000 degreesC. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：432 / 436
页数：5
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