Blend of Nylon 6 and Polyaniline Doped with Sulfanilic Acid and its Schottky Diode

被引：25

作者：

Ebrahim, Shaker Mabrouk ^{[1
]}

Soliman, Moataz Mohmed ^{[1
]}

Abd El-Latif, Mona Mahmoud ^{[2
]}

机构：

[1] Univ Alexandria, Dept Mat Sci, Inst Grad Studies & Res, Alexandria, Egypt

[2] Inst Adv Technol & New Mat, Borg El Arab City, Alexandria, Egypt

来源：

HIGH PERFORMANCE POLYMERS | 2010年 / 22卷 / 03期

关键词：

Conjugated polymers; polyaniline; nylon; 6; sulfanilic acid; Schottky diode; IN-SITU POLYMERIZATION; ELECTRICAL-CONDUCTIVITY; SULFONIC-ACID; COMPOSITE; CRYSTALLIZATION; PERMITTIVITY; POLYAMIDE-6; DEGRADATION; FILMS;

D O I：

10.1177/0954008309103796

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Polyaniline/nylon 6 blends were prepared from formic acid as a single solvent with various weight ratios of polyaniline (PANI). The optical, structural, morphological, thermal, and electrical properties of these blends were investigated. Blend films with PANI protonated with sulfanilic acid (SA) as a new protonating agent showed higher conductivity and degree of protonation in comparison with unprotonated PANI. The PANI-SA/nylon 6 blend exhibited a percolation threshold at around 1.66 wt.% of PANI, whereas unprotonated PANI/nylon 6 blend appeared at round 10 wt.% of PANI. Schottky diodes based on PANI-SA and nylon 6 blend at different weight percentages of PANI were fabricated and characterized using Al as Schottky contact and Ag as an Ohmic contact.

引用

页码：377 / 391

页数：15

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