Evidence of Superior Ferroelectricity in Structurally Welded ZnSnO3 Nanowire Arrays

Ferroelectric (FE) materials enable design of integrated circuits for nonvolatile random access memories (NVRAM), micro-electro-mechanical (MEM) devices, and high frequency electrical components. In contemporary years, progress in the direct growth of FE nanostructures homogeneously distributed on substrates with controlled morphologies, orientations, and dimensionalities and the capabilities to measure their polarization properties have further added to this technology. Embedding FE nanostructures within the polymeric host introduces huge dielectric loss that degrades the polarization properties, as observed in vertically aligned PZT nanotube arrays. As the NWs extended in length, low energy crystallites along all possible crystallographic directions grew undisturbed and later served as nano-templates for further growth, resulting in the loss of the initial preferred orientation in the ultra-long NWs.