Adjustable nanofabricated atomic size contacts

被引:268
作者
vanRuitenbeek, JM
Alvarez, A
Pineyro, I
Grahmann, C
Joyez, P
Devoret, MH
Esteve, D
Urbina, C
机构
[1] UNIV CHILE,FAC CIENCIAS FIS & MATEMAT,DEPT FIS,SANTIAGO,CHILE
[2] CENS,SERV PHYS ETAT CONDENSE,F-91191 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1063/1.1146558
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Metallic point contacts and tunnel junctions with a small and adjustable number of conduction channels have been obtained in the last few years using scanning tunneling microscope and break junction techniques. For conventional break junctions, the reported drift of the interelectrode spacing in the tunnel regime is typically of the order of 0.5 pm/min (1 pm=10(-12) m). We have nanofabricated break junctions which display a drift smaller than 0.2 pm/h. The improvement results from the scaling down by two orders of magnitude of the device dimensions. We describe the nanofabrication process, which can be adapted to most metals. We have performed measurements on Al, Cu, and Nb devices. The results illustrate the ability of the technique to explore phenomenalike conductance quantization and two level fluctuations. These new adjustable atomic size contacts and tunnel junctions can be integrated in complex circuits. (C) 1996 American Institute of Physics.
引用
收藏
页码:108 / 111
页数:4
相关论文
共 16 条
[1]   ON THE TRANSITION FROM TUNNELING REGIME TO POINT-CONTACT - GRAPHITE [J].
AGRAIT, N ;
RODRIGO, JG ;
VIEIRA, S .
ULTRAMICROSCOPY, 1992, 42 :177-183
[2]   PLASTIC-DEFORMATION OF NANOMETER-SCALE GOLD CONNECTIVE NECKS [J].
AGRAIT, N ;
RUBIO, G ;
VIEIRA, S .
PHYSICAL REVIEW LETTERS, 1995, 74 (20) :3995-3998
[3]   ELECTRON METAL-SURFACE INTERACTION POTENTIAL WITH VACUUM TUNNELING - OBSERVATION OF THE IMAGE FORCE [J].
BINNIG, G ;
GARCIA, N ;
ROHRER, H ;
SOLER, JM ;
FLORES, F .
PHYSICAL REVIEW B, 1984, 30 (08) :4816-4818
[4]   CONDUCTIVITY SENSITIVITY OF INELASTIC SCANNING TUNNELING MICROSCOPY [J].
BINNIG, G ;
GARCIA, N ;
ROHRER, H .
PHYSICAL REVIEW B, 1985, 32 (02) :1336-1338
[5]  
Grabert H., 1992, Single Charge Tunneling
[6]  
HANSMA P., 1982, TUNNELING SPECTROSCO, V1
[7]   ONE-ATOM POINT CONTACTS [J].
KRANS, JM ;
MULLER, CJ ;
YANSON, IK ;
GOVAERT, TCM ;
HESPER, R ;
VANRUITENBEEK, JM .
PHYSICAL REVIEW B, 1993, 48 (19) :14721-14724
[8]   ELECTRON-TUNNELING EXPERIMENTS USING NB-SN BREAK JUNCTIONS [J].
MORELAND, J ;
EKIN, JW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) :3888-3895
[9]   EXPERIMENTAL-OBSERVATION OF THE TRANSITION FROM WEAK LINK TO TUNNEL JUNCTION [J].
MULLER, CJ ;
VANRUITENBEEK, JM ;
DEJONGH, LJ .
PHYSICA C, 1992, 191 (3-4) :485-504
[10]   QUANTIZED CONDUCTANCE IN AN ATOM-SIZED POINT-CONTACT [J].
OLESEN, L ;
LAEGSGAARD, E ;
STENSGAARD, I ;
BESENBACHER, F ;
SCHIOTZ, J ;
STOLTZE, P ;
JACOBSEN, KW ;
NORSKOV, JK .
PHYSICAL REVIEW LETTERS, 1994, 72 (14) :2251-2254