Resonant Injection Enhanced Field Effect Transistor for Low Voltage Switching: Concept and Quantum Transport Simulation

被引：4

作者：

Chen, Hui ^{[1
]}

Banerjee, S. K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78712 USA

来源：

2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2009年

关键词：

Resonant tunneling transistor; Low-voltage switching; Quantum transport; Parallelization;

D O I：

10.1109/MWS.2009.13

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A Resonant Injection Enhanced Field Effect Transistor (RIEFET) device concept for low voltage switching has been developed. Two-dimensional electrostatically self-consistent ballistic quantum transport simulations of device operation are provided. To reduce simulation time, the two dimensional ballistic transport code was parallelized. The potential significance of parasitic phonon-assisted transport also is explored in quasi-one-dimensional simulations of transport through the resonant barrier.

引用

页码：63 / 66

页数：4

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