A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

被引：21

作者：

Shuto, Yusuke ^{[1
,5
]}

Nakane, Ryosho ^{[2
,5
]}

Wang, Wenhong ^{[3
,5
]}

Sukegawa, Hiroaki ^{[3
,5
]}

Yamamoto, Shuu'ichirou ^{[4
,5
]}

Tanaka, Masaaki ^{[2
,5
]}

Inomata, Koichiro ^{[3
,5
]}

Sugahara, Satoshi ^{[1
,5
]}

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268502, Japan

[2] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[3] Natl Inst Mat Sci, Magnet Mat Ctr, Tsukuba, Ibaraki 3050047, Japan

[4] Tokyo Inst Technol, Dept Informat Proc, Yokohama, Kanagawa 2268502, Japan

[5] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

ROOM-TEMPERATURE; MAGNETORESISTANCE; TRANSPORT; INJECTION;

D O I：

10.1143/APEX.3.013003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated and characterized a new spin-functional metal-oxide-semiconductor field-effect transistor (MOSFET) referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductance controlled by the magnetization configurations of the MTJ at room temperature. This is the first observation of spin-transistor operations for spin-functional MOSFETs. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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